Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials : TFT TECHNOLOGIES

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概要

• 論文の詳細を見る

• Microcrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250℃ in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance. Raman spectroscopy, and optical bandgap measurements. One-mask a-Si:H thin film transistors (TFT's) were fabricated with those novel materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm^2/V・s, respectively without any thermal treatment steps.

• 社団法人映像情報メディア学会の論文
• 1993-10-27

著者

• Hwang H.l.

  Department Of Electric Engineering National Tsing Hua Universtiy

• Hwang H.l.

  Department Of Electrical Engineering National Tsing-hua University

• Hsu K.C.

  Department of Electrical Engineering, National Tsing-Hua University

• Chen B.Y.

  Department of Materials Science and Engineering, National Tsing-Hua University

• Hsu H.T.

  Department of Electrical Engineering, National Tsing-Hua University

• Wang K.C.

  Department of Electrical Engineering, National Tsing-Hua University

• Yew T.R.

  Materials Science Center, National Tsing-Hua University

• Hsu H.t.

  Department Of Electrical Engineering National Tsing-hua University

• Hsu K.c.

  Department Of Electrical Engineering National Tsing-hua University

• Chen B.y.

  Department Of Materials Science And Engineering National Tsing-hua University

• Wang K.c.

  Department Of Electrical Engineering National Tsing-hua University

• Yew T.r.

  Materials Science Center National Tsing-hua University

関連論文

• Formation and Microanalysis of Selenized CuInSe_2 Films
• Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials : TFT TECHNOLOGIES
• Field-Drifting Resonance Tunneling Through a-Si:H/a-Si_C_x:H Double Barrier in the p-i-n Structure : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
• X-Ray Photoelectron Spectroscopy Studies on Surface Modification of CuInSe_2
• Analysis of Electronic States of Phosphorus Intersitials in Phosphorus-Implanted Copper Indium Disulfied by the Molecular Orbital Approach

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