Analysis of Electronic States of Phosphorus Intersitials in Phosphorus-Implanted Copper Indium Disulfied by the Molecular Orbital Approach

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-12-30

著者

• Hwang H.l.

  Department Of Electrical Engineering National Tsing Hua University

• Hwang H.l.

  Department Of Electric Engineering National Tsing Hua Universtiy

• HSU Y.J.

  Department of Electrical Engineering, National Tsing Hua University

• Hsu Y.j.

  Department Of Electrical Engineering National Tsing Hua University

関連論文

• Formation and Microanalysis of Selenized CuInSe_2 Films
• Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials : TFT TECHNOLOGIES
• Field-Drifting Resonance Tunneling Through a-Si:H/a-Si_C_x:H Double Barrier in the p-i-n Structure : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
• X-Ray Photoelectron Spectroscopy Studies on Surface Modification of CuInSe_2
• Analysis of Electronic States of Phosphorus Intersitials in Phosphorus-Implanted Copper Indium Disulfied by the Molecular Orbital Approach

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