Field-Drifting Resonance Tunneling Through a-Si:H/a-Si_<1-x>C_x:H Double Barrier in the p-i-n Structure : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors

スポンサーリンク

概要

• 論文の詳細を見る

• An a-Si:H/a-Si_<1-x>C_x:H double-barrier structure was imbedded in the i layer of a p-i-n structure. The effects of photoinduced carriers tunneling through the double-barrier structure were examined. Distinct current bumps at room temperature were observed for the first time. The results support the resonance tunneling of carriers in the multilayer which provides further direct evidence of the quantum size effects of amorphous silicon-based superlattice structures.

• 社団法人応用物理学会の論文
• 1988-12-20

著者

• Hwang H.l.

  Department Of Electrical Engineering Tsing Hua University

• Hwang H.l.

  Department Of Electric Engineering National Tsing Hua Universtiy

• JIANG Y.L.

  Department of Electrical Engineering, Tsing Hua University

• Jiang Y.l.

  Department Of Electrical Engineering Tsing Hua University

関連論文

• Formation and Microanalysis of Selenized CuInSe_2 Films
• Hydrogenated Amorphous Silicon Thin Film Transistors Made by Novel Materials : TFT TECHNOLOGIES
• Field-Drifting Resonance Tunneling Through a-Si:H/a-Si_C_x:H Double Barrier in the p-i-n Structure : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
• X-Ray Photoelectron Spectroscopy Studies on Surface Modification of CuInSe_2
• Analysis of Electronic States of Phosphorus Intersitials in Phosphorus-Implanted Copper Indium Disulfied by the Molecular Orbital Approach

スポンサーリンク