Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-15
著者
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LO Jenn-Gee
Department of Applied Physics, Chung Cheng Institute of Technology
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LU Luke
Department of Applied Physics, Chung Cheng Institute of Technology
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Yu Swei-yam
Mosel Vitelic Incorporation Science-based Industrial Park
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CHANG Ting-Huan
Department of Applied Physics, Chung Cheng Institute of Technology
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KUO Tung-Cheng
Department of Electrical Engineering, National Tsing-Hua University
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HSU Charles
Department of Electrical Engineering, National Tsing-Hua University
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TSENG Kun-Fu
Department of Applied Physics, Chung Cheng Institute of Technology
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Lu Luke
Department Of Applied Physics Chung Cheng Institute Of Technology
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Hsu Charles
Deparment Of Electrical Engineering National Ching Hua University
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Lo Jenn-gee
Department Of Mathematics And Physics Chinese Naval Academy
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Tseng Kun-fu
Department Of Applied Physics Chung Cheng Institute Of Technology
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Kuo Tung-cheng
Department Of Electrical Engineering National Tsing-hua University
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Chang Ting-huan
Department Of Applied Physics Chung Cheng Institute Of Technology
関連論文
- Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
- Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
- Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
- Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque