Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-06-15
著者
-
Chen J‐y
National Cheng‐kung Univ. Tainan Twn
-
LO Jenn-Gee
Department of Applied Physics, Chung Cheng Institute of Technology
-
CHEN Jun-Yuan
Department of Applied Physics, Chung Cheng Institute of Technology
-
LU Luke
Department of Applied Physics, Chung Cheng Institute of Technology
-
Chen Jun-yuan
Department Of Applied Physics Chung Cheng Institute Of Technology
-
Lu L
Chung Cheng Inst. Technol. Tao Yuan Twn
-
Lu Luke
Department Of Applied Physics Chung Cheng Institute Of Technology
-
Lo J‐g
Chinese Naval Acad. Kaohsiung Twn
関連論文
- Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
- Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
- Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
- Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor