LU Luke | Department of Applied Physics, Chung Cheng Institute of Technology
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概要
関連著者
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LU Luke
Department of Applied Physics, Chung Cheng Institute of Technology
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Lu Luke
Department Of Applied Physics Chung Cheng Institute Of Technology
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LO Jenn-Gee
Department of Applied Physics, Chung Cheng Institute of Technology
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Chen J‐y
National Cheng‐kung Univ. Tainan Twn
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CHEN Jun-Yuan
Department of Applied Physics, Chung Cheng Institute of Technology
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HSU Charles
Department of Electrical Engineering, National Tsing-Hua University
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Chen Jun-yuan
Department Of Applied Physics Chung Cheng Institute Of Technology
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Lu L
Chung Cheng Inst. Technol. Tao Yuan Twn
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Hsu Charles
Deparment Of Electrical Engineering National Ching Hua University
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Lo J‐g
Chinese Naval Acad. Kaohsiung Twn
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LAN Hai
Chung Shan Institute of Science and Technology
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Yu Swei-yam
Mosel Vitelic Incorporation Science-based Industrial Park
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CHANG Ting-Huan
Department of Applied Physics, Chung Cheng Institute of Technology
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KUO Tung-Cheng
Department of Electrical Engineering, National Tsing-Hua University
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TSENG Kun-Fu
Department of Applied Physics, Chung Cheng Institute of Technology
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Guo Jyh-chyurn
Electronic Research And Service Organization Industrial Technology Research Institute
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Lo Jenn-gee
Department Of Mathematics And Physics Chinese Naval Academy
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Tseng Kun-fu
Department Of Applied Physics Chung Cheng Institute Of Technology
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Kuo Tung-cheng
Department Of Electrical Engineering National Tsing-hua University
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Chang Ting-huan
Department Of Applied Physics Chung Cheng Institute Of Technology
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LU Wei-Lee
Department of Applied Physics, Chung Cheng Institute of Technology
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KAO Chin-Hsin
Department of Applied Physics, Chung Cheng Institute of Technology
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GUO Jyh-Chyurn
Electronic Research and Service Organization, Industrial Technology Research Institute
著作論文
- Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
- Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
- Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
- Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor