Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Chen J‐y
National Cheng‐kung Univ. Tainan Twn
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LO Jenn-Gee
Department of Applied Physics, Chung Cheng Institute of Technology
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LAN Hai
Chung Shan Institute of Science and Technology
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CHEN Jun-Yuan
Department of Applied Physics, Chung Cheng Institute of Technology
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LU Luke
Department of Applied Physics, Chung Cheng Institute of Technology
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Chen Jun-yuan
Department Of Applied Physics Chung Cheng Institute Of Technology
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Lu L
Chung Cheng Inst. Technol. Tao Yuan Twn
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Lu Luke
Department Of Applied Physics Chung Cheng Institute Of Technology
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Lo J‐g
Chinese Naval Acad. Kaohsiung Twn
関連論文
- Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
- Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
- Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
- Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor