Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

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概要

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• An anomalous hole mobility degradation effect at low temperature and low gate overdrive of a compensated p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is reported. Measurements are performed with great care, including the temperature calibration of the device and measurement timing control to exclude unwanted self-heating effect. Methods to determine threshold voltage and effective mobility are discussed. The anomalous effect can be explained by the trapping or freezing out of the electrons ionized from donor level at the acceptor site. The additional charged center enhances the Coulomb scattering of conducting holes that are transported in this region.

• 社団法人応用物理学会の論文
• 1995-07-15

著者

• LU Luke

  Department of Applied Physics, Chung Cheng Institute of Technology

• HSU Charles

  Department of Electrical Engineering, National Tsing-Hua University

• Guo Jyh-chyurn

  Electronic Research And Service Organization Industrial Technology Research Institute

• Lu Luke

  Department Of Applied Physics Chung Cheng Institute Of Technology

• Hsu Charles

  Deparment Of Electrical Engineering National Ching Hua University

• LU Wei-Lee

  Department of Applied Physics, Chung Cheng Institute of Technology

• KAO Chin-Hsin

  Department of Applied Physics, Chung Cheng Institute of Technology

• GUO Jyh-Chyurn

  Electronic Research and Service Organization, Industrial Technology Research Institute

関連論文

• Numerical Simulation of the Growth of HgCdTe Layers by Isothermal Vapor Phase Epitaxy
• Optical Transitions via the Structure-Defect Levels Due to Lattice Vacancies in InSb
• Effective Channel Length and Source-Drain Series-Resistance Determination after Electrical Gate Length Verification of Metal-Oxide-Semiconductor Field-Effect Transistor
• Low-Temperature Hole Mobility Anomaly in Compensated P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
• Direct Observation of Channel-Doping-Dependent Reverse Short Channel Effect Using Decoupled C-V Technuque

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