Preparation of Highly-Oriented Co2MnSi Films on a Non-Single-Crystalline Substrate Using a Titanium--Nitride Buffer Layer
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概要
- 論文の詳細を見る
Highly-oriented titanium--nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium--nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4 Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co2MnSi.
- 2011-02-25
著者
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Sakuraba Yuya
Institute For Materials Research Tohoku University
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
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Sugihara Atsushi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Takanashi Koki
Institute for Material Research, Tohoku University
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Yakushiji Kay
National Institute of Advanced Industrial Technology and Science, Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
National Institute of Advanced Industrial Technology and Science, Tsukuba, Ibaraki 305-8568, Japan
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