High Remanent Magnetization of $L1_{0}$-Ordered FePt Thin Film on MgO/(001) GaAs

概要

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We investigated the optimized condition of the high remanent magnetization for $L1_{0}$-ordered FePt on MgO/(001) i-GaAs substrate. Perpendicularly magnetized FePt films with different thicknesses of 5 and 10 nm were prepared at a substrate temperature $T_{\text{s}}=300$ °C by magnetron sputtering. The ratio of remanent magnetization to saturation magnetization for the 5-nm-thick FePt layer was increased to 0.93 by post-annealing at $T_{\text{a}}=350$ °C for 60 min, whereas that of the 10-nm-thick FePt layer was increased only to 0.3. The uniaxial magnetic anisotropy constant and the degree of long-range order for the 5-nm-thick FePt were $K_{\text{u}}=1.0\pm 0.1\times 10^{7}$ erg/cm3 and $S=0.75\pm 0.15$, respectively, which are almost comparable to those of FePt on a (001) MgO substrate.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-04-25