Spin–Orbit Interaction in an In0.53Ga0.47As/In0.7Ga0.3As Shallow Two-Dimensional Electron Gas Located 5 nm below InP Surface Barrier

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A two-dimensional electron gas (2DEG) formed near a semiconductor surface has an advantage for the injection and detection of electron spins to realize a spin field-effect transistor (spin FET). Here, we investigated the strength of spin–orbit interaction (SOI) in 26.5 nm In0.52Al0.48As and AlAs surface layer/5 nm InP/7.5 nm In0.53Ga0.47As/10 nm In0.7Ga0.3As 2DEGs. By the selective wet etching of In0.52Al0.48As and InP layers, we achieved a 5 nm InP/In0.53Ga0.47As/In0.7Ga0.3As 2DEG with a carrier density of $1.06\times 10^{12}$ cm-2. Magnetoconductance is measured to evaluate the strength of Rashba SOI by the quantum correction of the conductance in the ballistic regime developed by Golub. The Rashba SOI parameter $\alpha$ reaches $3.85\times 10^{-12}$ eV m, which yields a spin rotation angle of $2.34\pi$ within the elastic scattering length indicating a good candidate for the channel of a spin FET.
2010-04-25