Anomalous Nernst Effect in an L10-Ordered Epitaxial FePt Thin Film
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概要
- 論文の詳細を見る
The anomalous Nernst effect in a perpendicularly magnetized L10-ordered epitaxial FePt(001) thin film has been investigated, and the anomalous Nernst coefficient and the anomalous Nernst angle of the FePt thin film were experimentally evaluated. Furthermore, the voltage due to the anomalous Nernst effect in the spin-Hall device was simulated by the finite element method. A good agreement between the experiment and the simulation was found. It was revealed that the anomalous Nernst effect could be quantitatively discussed even in nanoscale devices.
- 2012-09-25
著者
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Takanashi Koki
Institute For Materials Research (imr) Tohoku University
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Mizuguchi Masaki
Institute For Materials Research (imr) Tohoku University
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Saitoh Eiji
Institute For Materials Research Tohoku University
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UCHIDA Ken-ichi
Institute for Materials Research, Tohoku University
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Uchida Ken-ichi
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Ohata Satoko
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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OHATA Satoko
Institute for Materials Research, Tohoku University
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Takanashi Koki
Institute for Material Research, Tohoku University
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