Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
スポンサーリンク
概要
著者
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Hosoya Hiroyuki
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Zayets Vadym
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Single-Shot Measurements of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions(Advances in Spintronics)
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- Quantitative analysis of coherent and incoherent tunneling currents in MgO-based epitaxial magnetic tunnel junctions
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Preparation of Highly-Oriented Co2MnSi Films on a Non-Single-Crystalline Substrate Using a Titanium--Nitride Buffer Layer
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
- Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Ultrahigh Speed Spin-Transfer Magnetization Switching in Magnetic Multilayers
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin \gamma-Fe
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin γ-Fe₂O₃ Layer
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe₂O₃/MgO Barrier
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe_2O_3/MgO Barrier
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers