Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
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概要
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We investigated the effect of voltage on the perpendicular magnetic anisotropy in an ultrathin Fe<inf>80</inf>B<inf>20</inf>layer sandwiched between two MgO barrier layers with different thicknesses, in which the bias voltage is predominantly applied to one of the MgO layers. The application of both positive and negative bias voltages enhanced the perpendicular anisotropy, in contrast with the odd function dependence previously observed in a MgO/ferromagnetic metal/non-magnetic metal structure. Moreover, for positive bias voltages, the large anisotropy change slope of 108 fJ/Vm was demonstrated. These results indicate that the MgO-sandwich structure has high potential to extend the availability of the voltage effect.
- 2013-07-25
著者
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Yakushiji Kay
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Nozaki Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tamaru Shingo
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Sekine Masaki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Matsumoto Rie
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tamaru Shingo
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Kubota Hitoshi
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center
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