Kubota Hitoshi | National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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概要
関連著者
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University
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Ando Koji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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KUBOTA Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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FUKUSHIMA Akio
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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YUASA Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Kubota Hitoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Nozaki Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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SUZUKI Yoshishige
Graduate School of Engineering Science, Osaka University
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NOZAKI Takayuki
Graduate School of Engineering Science, Osaka University
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Yakushiji Kay
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Nozaki Takayuki
Graduate School Of Engineering Science Osaka University
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Ohkubo Tadakatsu
National Institute For Materials Science
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University:nanoelectronics Research Institute (neri) Na
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Hono Kazuhiro
National Inst. For Materials Sci. (nims) Ibaraki Jpn
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Suzuki Yoshishige
Osaka Univ. Osaka Jpn
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Imamura Hiroshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Taniguchi Tomohiro
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tamaru Shingo
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center
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SHIRAISHI Masashi
Graduate School of Engineering Science, Osaka University
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Shiota Yoichi
Graduate School Of Engineering Science Osaka University
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Ando K
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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ANDO Koji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Konishi Katuaki
Graduate School Of Engineering Science Osaka University
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Shiraishi Masashi
Graduate School Of Engineering Science Osaka Univ.
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Nishimura Kazumasa
Process Development Center Canon Anelva Corporation
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Ando Koji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tamaru Shingo
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Sekine Masaki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Matsumoto Rie
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Seki Takayuki
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Deac Alina
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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TAKANASHI Koki
Institute for Materials Research (IMR), Tohoku University
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Takanashi Koki
Institute For Materials Research Tohoku University
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Takanashi Koki
Institute For Materials Research (imr) Tohoku University
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ISHIBASHI Shota
Graduate School of Engineering Science, Osaka University
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SEKI Takeshi
Graduate School of Engineering Science, Osaka University
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YAKATA Satoshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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MAEHARA Hiroki
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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TSUNEKAWA Koji
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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DJAYAPRAWIRA David
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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Shinjo Teruya
Graduate School Of Engineering Science Osaka University
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Djayaprawira David
Canon Anelva Corp. Kanagawa Jpn
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Djayaprawira David
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Seki Takeshi
Graduate School Of Engineering Science Osaka University
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Tsunekawa Koji
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Yakata Satoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Maehara Hiroki
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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TOMITA Hiroyuki
Graduate School of Human and Environmental Studies, Kyoto University
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HONO Kazuhiro
National Institute for Materials Science
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Cros Vincent
Unite Mixte De Physique Cnrs/thales And Universite Paris Sud 11
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FERT Albert
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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KONISHI Katuaki
Graduate School of Engineering Science, Osaka University
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NAKATANI Yoshinobu
University of Electro-Communications
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Ishibashi Shota
Graduate School Of Engineering Science Osaka University
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Ohkubo Tadakatsu
The Institute Of Science And Industrial Research Osaka University
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Ohkubo Tadakatsu
The Institute Of Scientific And Industrial Research Osaka University
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Hono K
National Inst. For Materials Sci. Tsukuba Jpn
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Hono K
National Research Institute For Metals
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Hono Kazuhiro
National Institute For Materials Science (nims)
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Hono Kazuhiro
Institute For Materials Research (imr) Tohoku University:(present Address)national Research Institut
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Kodzuka Masaya
National Institute For Materials Science (nims)
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SUGIHARA Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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YAMAMOTO Atsushi
National Institute of Advanced Industrial Science and Technology (AIST), Thermoelectric Energy Conve
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GEORGES Benoit
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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GROLLIER Julie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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MARCILHAC Bruno
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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CRETE Denis-Gerard
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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MAGE Jean-Claude
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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Tomita Hiroyuki
Graduate School Of Engineering Science Osaka University
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Ohkubo Tadakatsu
National Institute For Materials Science (nims)
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Sugihara Atsushi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Katayama Toshikazu
Tohoku Univ. Sendai Jpn
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Konishi Katsunori
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-853
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Tsunekawa Koji
Canon Anelva Corp. Kanagawa Jpn
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Hono Kazuhiro
National Institute For Materials Science Tsukuba
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Yamamoto Atsushi
National Institute Of Advanced Industrial Science And Technology (aist) Thermoelectric Energy Conver
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Fert Albert
Unite Mixte De Physique Cnrs/thales
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Chappert Claude
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
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Yagami Kojiro
SSNC, Semiconductor Technology Development Group, Sony Corp., Atsugi, Kanagawa 243-0014, Japan
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Tulapurkar Ashwin
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Devolder Thibaut
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
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Crozat Paul
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
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Crozat Paul
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
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Devolder Thibaut
Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
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Suzuki Yoshishige
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Suzuki Yoshishige
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Takanashi Koki
Institute for Material Research, Tohoku University
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kubota Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Yakushiji Kay
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Arai Hiroko
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tsunegi Sumito
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Ohkubo Tadakatsu
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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Ando Koji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Kubota Hitoshi
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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KUBOTA Hitoshi
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center
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TANIGUCHI Tomohiro
National Institute of Advanced Industrial Science and Technology(ALST),Spintronics Research Center
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NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology,Spintronics Research Center
著作論文
- Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Single-Shot Measurements of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Giant Peltier Effect in a Submicron-Sized Cu-Ni/Au Junction with Nanometer-Scale Phase Separation
- Current-Field Driven "Spin Transistor"
- Frequency Converter Based on Nanoscale MgO Magnetic Tunnel Junctions
- Ultrahigh Speed Spin-Transfer Magnetization Switching in Magnetic Multilayers
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer
- Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin \gamma-Fe
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin γ-Fe₂O₃ Layer
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe₂O₃/MgO Barrier
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe_2O_3/MgO Barrier
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers