Katayama Toshikazu | Tohoku Univ. Sendai Jpn
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概要
関連著者
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Katayama Toshikazu
Tohoku Univ. Sendai Jpn
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Tsunekawa Koji
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Koide Tsuneharu
Photon Factory Imss High Energy Accelerator Research Organization
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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Maehara Hiroki
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Suzuki Yoshishige
Osaka Univ. Osaka Jpn
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamamoto Masafumi
Fachbereich Physik And Forschungszentrum Optimas Technische Universitaet Kaiserslautern Erwin-schroedinger-strasse ...
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SUZUKI Yoshishige
Graduate School of Engineering Science, Osaka University
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ISHIBASHI Shota
Graduate School of Engineering Science, Osaka University
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SEKI Takeshi
Graduate School of Engineering Science, Osaka University
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NOZAKI Takayuki
Graduate School of Engineering Science, Osaka University
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KUBOTA Hitoshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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YAKATA Satoshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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FUKUSHIMA Akio
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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YUASA Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center
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MAEHARA Hiroki
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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TSUNEKAWA Koji
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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DJAYAPRAWIRA David
Canon ANELVA Corporation, Magnetic Thin Film Development Division Process Development Center General
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Djayaprawira David
Canon Anelva Corp. Kanagawa Jpn
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Djayaprawira David
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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SAITO TOSHIAKI
Department of Pediatrics, Tohoku University School of Medicine
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KOIDE Tsuneharu
Photon Factory, National Laboratory for High Energy Physics
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Seki Takeshi
Graduate School Of Engineering Science Osaka University
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Kubota Hitoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yakata Satoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Cros Vincent
Unite Mixte De Physique Cnrs/thales And Universite Paris Sud 11
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FERT Albert
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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KATAYAMA Toshikazu
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Mamiya Kazutoshi
Photon Factory Imss High Energy Accelerator Research Organization
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MIYOKAWA Koya
Department of Physics, Toho University
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SAITO Shinji
Department of Physics, Toho University
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KAMINO Tomoyuki
Department of Physics, Toho University
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HANASHIMA Koji
Department of Physics, Toho University
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SUZUKI Yoshishige
NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Nozaki Takayuki
Graduate School Of Engineering Science Osaka University
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Ishibashi Shota
Graduate School Of Engineering Science Osaka University
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TSUNEKAWA Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University:nanoelectronics Research Institute (neri) Na
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Miyokawa Koya
Department Of Physics Toho University
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Matsumoto Rie
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Hanashima Koji
Department Of Physics Toho University
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GROLLIER Julie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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Saito Toshiaki
Department Of Medicinal Chemistry Showa Pharmaceutical University
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Kamino Tomoyuki
Department Of Physics Toho University
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Katayama Toshikazu
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tsunekawa Koji
Canon Anelva Corp. Kanagawa Jpn
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Nagamine Yoshinori
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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MATSUMOTO Rie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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CHANTHBOUALA Andre
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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NISHIMURA Kazumasa
Process Development Center, Canon ANELVA Corporation
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MAEHARA Hiroki
Process Development Center, Canon ANELVA Corporation
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Nishimura Kazumasa
Process Development Center Canon Anelva Corporation
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Fert Albert
Unite Mixte De Physique Cnrs/thales
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Suzuki Yoshishige
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Saito Shinji
Department Of Applied Physics School Of Science And Engineering Waseda University
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Suzuki Yoshishige
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Saito Toshiaki
Department of Civil Engineering, College of Science and Technology, Nihon University
著作論文
- Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- X-ray Absorption and X-ray Magnetic Circular Dichroism Studies of a Monatomic Fe(001) Layer Facing a Single-Crystalline MgO(001) Tunnel Barrier
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Electronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by x-ray magnetic circular dichroism
- X-ray absorption spectroscopy and x-ray magnetic circular dichroism of epitaxially grown Heusler alloy Co2MnSi ultrathin films facing a MgO barrier