Nagamine Yoshinori | Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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概要
- Nagamine Yoshinoriの詳細を見る
- 同名の論文著者
- Process Technology Department Electron Device Equipment Division Canon Anelva Corporationの論文著者
関連著者
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Tsunekawa Koji
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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TSUNEKAWA Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Nagamine Yoshinori
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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北本 仁孝
東京工業大学
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TAKEUCHI Takashi
Department of Pediatrics, Wakayama Medical University
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Djayaprawira David
Canon Anelva Corp. Kanagawa Jpn
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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Maehara Hiroki
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Cros Vincent
Unite Mixte De Physique Cnrs/thales And Universite Paris Sud 11
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FERT Albert
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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KITAMOTO Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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CHOI Young-Suk
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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NAGAMINE Yoshinori
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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DJAYAPRAWIRA David
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Matsumoto Rie
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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GROLLIER Julie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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Katayama Toshikazu
Tohoku Univ. Sendai Jpn
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Tsunekawa Koji
Canon Anelva Corp. Kanagawa Jpn
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Choi Young-suk
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Kitamoto Yoshitaka
R&d Center Digital Equipment Corporation Japan
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Kitamoto Yoshitaka
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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MATSUMOTO Rie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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CHANTHBOUALA Andre
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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NISHIMURA Kazumasa
Process Development Center, Canon ANELVA Corporation
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MAEHARA Hiroki
Process Development Center, Canon ANELVA Corporation
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Nishimura Kazumasa
Process Development Center Canon Anelva Corporation
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Takeuchi Takashi
Department Of Chemical Engineering Science Yokohama National University
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Fert Albert
Unite Mixte De Physique Cnrs/thales
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Takeuchi Takashi
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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北本 仁孝
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,
著作論文
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes