DJAYAPRAWIRA David | Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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概要
- DJAYAPRAWIRA David D.の詳細を見る
- 同名の論文著者
- Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporationの論文著者
関連著者
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北本 仁孝
東京工業大学
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DJAYAPRAWIRA David
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Choi Young-suk
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Kitamoto Yoshitaka
R&d Center Digital Equipment Corporation Japan
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Kitamoto Yoshitaka
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Takeuchi Takashi
Department Of Chemical Engineering Science Yokohama National University
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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北本 仁孝
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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TAKEUCHI Takashi
Department of Pediatrics, Wakayama Medical University
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Djayaprawira David
Canon Anelva Corp. Kanagawa Jpn
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Tsunekawa Koji
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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KITAMOTO Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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TSUNEKAWA Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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CHOI Young-Suk
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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NAGAMINE Yoshinori
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Genseki Akira
Center For Advanced Materials Analysis Tokyo Institute Of Technology
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HOSHI Yoichi
Department of Electronic Engineering, Tokyo Institute of Polytechnics
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Tsunekawa Koji
Canon Anelva Corp. Kanagawa Jpn
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Nagamine Yoshinori
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Takeuchi Takashi
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Tsunekawa Koji
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Choi Young-suk
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Nagamine Yoshinori
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Genseki Akira
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
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Djayaprawira David
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Hoshi Yoichi
Department of System Electronics and Information Technology, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
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Tsunekawa Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
著作論文
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions