Tsunekawa Koji | Process Development Center Canon Anelva Corporation
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概要
関連著者
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Nishimura Kazumasa
Process Development Center Canon Anelva Corporation
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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北本 仁孝
東京工業大学
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Tsunekawa Koji
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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TSUNEKAWA Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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DJAYAPRAWIRA David
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Choi Young-suk
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Nagamine Yoshinori
Process Technology Department Electron Device Equipment Division Canon Anelva Corporation
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Kitamoto Yoshitaka
R&d Center Digital Equipment Corporation Japan
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Kitamoto Yoshitaka
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Takeuchi Takashi
Department Of Chemical Engineering Science Yokohama National University
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Ando Koji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Kitamoto Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Hosoya Hiroyuki
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Zayets Vadym
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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北本 仁孝
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering,
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Seki Takayuki
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Deac Alina
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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TAKEUCHI Takashi
Department of Pediatrics, Wakayama Medical University
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Djayaprawira David
Canon Anelva Corp. Kanagawa Jpn
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Maehara Hiroki
Canon Anelva Corporation Magnetic Thin Film Development Division Process Development Center General
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Cros Vincent
Unite Mixte De Physique Cnrs/thales And Universite Paris Sud 11
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FERT Albert
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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KITAMOTO Yoshitaka
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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CHOI Young-Suk
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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NAGAMINE Yoshinori
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation
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Yakushiji Kay
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Matsumoto Rie
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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KUBOTA Hitoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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FUKUSHIMA Akio
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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YUASA Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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GROLLIER Julie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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Katayama Toshikazu
Tohoku Univ. Sendai Jpn
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Tsunekawa Koji
Canon Anelva Corp. Kanagawa Jpn
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MATSUMOTO Rie
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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CHANTHBOUALA Andre
Unite Mixte de Physique CNRS/Thales and Universite Paris Sud 11
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NISHIMURA Kazumasa
Process Development Center, Canon ANELVA Corporation
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MAEHARA Hiroki
Process Development Center, Canon ANELVA Corporation
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Fert Albert
Unite Mixte De Physique Cnrs/thales
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Takeuchi Takashi
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Maehara Hiroki
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Tsunekawa Koji
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Seki Takayuki
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Choi Young-suk
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
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Nagamine Yoshinori
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Suzuki Yoshishige
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Yakushiji Kay
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kubota Hitoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Tsunekawa Koji
Process Technology Department, Electron Device Equipment Division, Canon ANELVA Corporation, 5-8-1 Yotsuya, Fuchu, Tokyo 183-8508, Japan
著作論文
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions