Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
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概要
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CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) prepared by sputtering deposition and in situ annealing exhibited a high magnetoresistance (MR) ratio (above 170%) and an ultra-low resistance--area ($\mathit{RA}$) product [about 1.0 $\Omega$ (μm)2]. The MgO barrier, which was about 1 nm thick, was initially amorphous. In situ annealing of the barrier at 300 °C promoted crystallization of the MgO with (001) orientation, which resulted in the high MR ratio at the ultra-low $\mathit{RA}$ product. The present achievements will enable the development of highly sensitive tunnel magnetoresistive (TMR) read heads for hard disk drives with a recording density of about 1 Tbit/in.2.
- 2011-03-25
著者
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Yakushiji Kay
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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KUBOTA Hitoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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FUKUSHIMA Akio
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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YUASA Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Nishimura Kazumasa
Process Development Center Canon Anelva Corporation
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Tsunekawa Koji
Process Development Center Canon Anelva Corporation
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Nagamine Yoshinori
Process Development Center Canon Anelva Corporation
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Maehara Hiroki
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Tsunekawa Koji
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Seki Takayuki
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Nagamine Yoshinori
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan
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Yakushiji Kay
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Kubota Hitoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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