Highly Enhanced Electron-Injection Efficiency in GaAs-Based Light-Emitting Diodes Using a Fe/GaO_x Tunnel Injector
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-08-25
著者
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LE BRETON
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Le Breton
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Zayets Vadym
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Zayets Vadym
Nanoelectronics Research Institute Aist
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ANDO Koji
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SAITO Hidekazu
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Saito Hidekazu
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Saito Hidekazu
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Zayets Vadym
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ando Koji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ando Koji
Nanoelectronics Research Institute Aist
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Yuasa Shinji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ando Koji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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