室温で強磁性を示す希薄磁性半導体(Zn,Cr)Te

概要

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II-VI diluted magnetic semiconductor (DMS) Zn_<1-x>Cr_xTe films with Cr concentrations up to x=0.20 were successfully grown by a molecular beam epitaxy method. For the film with x=0.20, magnetization curves showed ferromagnetic behavior up to about room temperature. The Curie temperature was estimated to be 300 K±10 K by Arrott plot analysis. Magnetic circular dichroism measurements showed a strong interaction between sp-carriers and localized d-spins in the film. These results are strong evidence for room-temperature ferromagnetism in Zn_<1-x>Cr_xTe DMS. In spite of its high Curie temperature, Zn_<1-x>Cr_xTe showed a semiconducting electrical transport property. The co-existence of room-temperature ferromagnetism and semiconducting characters makes Zn_<1-x>Cr_xTe a promising material for various spintronic applications.
社団法人日本磁気学会の論文
2004-01-01