Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-05-25
著者
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Saito Hidekazu
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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YUASA Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Saito Hidekazu
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ando Koji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Watanabe Suguru
Tsukuba University
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Spiesser Aurelie
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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IBA Satoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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SAITO Hidekazu
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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SPIESSER Aurelie
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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WATANABE Suguru
University of Tsukuba
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JANSEN Ron
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Jansen Ron
Spintronics Research Center, AIST, Tsukuba
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- Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOx Tunnel Barrier
- Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
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