High Magnetoresistance Ratio and Low Resistance-Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes
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概要
- 論文の詳細を見る
- 2010-05-25
著者
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Seki Takeshi
Graduate School Of Engineering Science Osaka University
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Kubota Hitoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yakushiji Kay
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Nagahama Taro
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Yakushiji Kay
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Ando K
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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NOMA Kenji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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SARUYA Takeshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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KUBOTA Hitoshi
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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FUKUSHIMA Akio
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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YUASA Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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ANDO Koji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Noma Kenji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ando Koji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Origin of Very Low Effective Barrier Height in Magnetic Tunnel Junctions with a Semiconductor GaOx Tunnel Barrier
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