Peltier Effect in Sub-micron-Size Metallic Junctions
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-02-10
著者
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KUBOTA Hitoshi
Nanoelectronics Research Institute, AIST
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Yuasa Shinji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Kubota Hitoshi
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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FUKUSHIMA Akio
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University:nanoelectronics Research Institute (neri) Na
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Tulapurkar Ashwin
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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YAGAMI Kojiro
Semiconductor Technology Development Group, SSNC, Sony Corp.
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SUZUKI Yoshishige
Osaka University, Graduate School of Engineering Science
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YAMAMOTO Atsushi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki Yoshishige
Osaka Univ. Osaka Jpn
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Yagami Kojiro
Semiconductor Technology Development Group Ssnc Sony Corp.
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Yamamoto Atsushi
National Institute Of Advanced Industrial Science And Technology (aist) Thermoelectric Energy Conver
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Kubota Hitoshi
Nanoelectronics Research Institute (neri) National Institute Of Advanced Industrial Science And Tech
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Yuasa Shinji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Temperature Dependence of Tunnel Magnetoresistance in Co-Mn-Al/Al-Oxide/Co-Fe Junctions
- Single-Shot Measurements of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Spin-Transfer Switching and Thermal Stability in an FePt/Au/FePt Nanopillar Prepared by Alternate Monatomic Layer Deposition
- X-ray Absorption and X-ray Magnetic Circular Dichroism Studies of a Monatomic Fe(001) Layer Facing a Single-Crystalline MgO(001) Tunnel Barrier
- Voltage-Assisted Magnetization Switching in Ultrathin Fe_Co_ Alloy Layers
- Spin-Dependent Transport in C_-Co Nano-Composites
- Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions(Advances in Spintronics)
- Giant Peltier Effect in a Submicron-Sized Cu-Ni/Au Junction with Nanometer-Scale Phase Separation
- Direct Imaging of Local Spin Orientation within Artificial Nanomagnets
- High Magnetoresistance Ratio and Low Resistance-Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes
- Microwave-Assisted Magnetization Reversal in a Perpendicularly Magnetized Film
- Analysis of Degradation in Graphene-Based Spin Valves
- Current-Field Driven "Spin Transistor"
- Frequency Converter Based on Nanoscale MgO Magnetic Tunnel Junctions
- High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
- Coupled-Mode Excitations Induced in an Antiferromagnetically Coupled Multilayer by Spin-Transfer Torque
- Peltier Effect in Sub-micron-Size Metallic Junctions
- Highly Enhanced Electron-Injection Efficiency in GaAs-Based Light-Emitting Diodes Using a Fe/GaO_x Tunnel Injector
- Spin-Torque Diode Effect and Its Application(Advances in Spintronics)
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
- Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature
- Fabrication of Co2MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer
- Evaluation of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Huge Spin-Polarization of L21-Ordered Co2MnSi Epitaxial Heusler Alloy Film
- High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling