Kubota Hitoshi | Nanoelectronics Research Institute (neri) National Institute Of Advanced Industrial Science And Tech

Department Of Applied Physics Graduate School Of Engineering Tohoku University

National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center

National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center

Department Of Applied Physics Faculty Of Engineering Tohoku University

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Nanoelectronics Research Institute Aist

Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

Department Of Applied Physics Graduate School Of Engineering Tohoku University

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

Graduate School Of Engineering Science Osaka University:nanoelectronics Research Institute (neri) Na

Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)

Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

東北大学大学院工学研究科応用物理学専攻

東北大学原子分子材料科学高等研究機構(WPI)

高エ研

産総研

東北大工

Department of Applied Physics, Graduate School of Engineering, Tohoku University

Department of Applied Physics, Graduate School of Engineering, Tohoku University

Graduate School of Engineering Science, Osaka University

Department of Applied Physics, Graduate School of Engineering, Tohoku University

Department of Applied Physics, Graduate School of Engineering, Tohoku University

Department of Applied Physics, Graduate School of Engineering, Tohoku University

Core Research For Evolutional Science And Technology (jrcat) : Department Of Physics Tohoku Universi

Physics Department Granduate School Of Science Tohoku University

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

Physics Department Tohoku University

Graduate School Of Engineering Science Osaka University

産業技術総合研

Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

Semiconductor Technology Development Group, SSNC, Sony Corp.

Osaka University, Graduate School of Engineering Science

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Graduate School Of Engineering Tohoku University

Osaka Univ. Osaka Jpn

Tokyo Univ. Information Sci. Chiba Jpn

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Semiconductor Technology Development Group Ssnc Sony Corp.

National Institute Of Advanced Industrial Science And Technology (aist) Thermoelectric Energy Conver

Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

Electron Device Equipment Division, Canon ANELVA Corporation

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Electron Device Division, ANELVA Corp., 5-8-1 Yotsuya, Fuchu-shi, Tokyo 183-8508, Japan

Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

Electron Device Division, ANELVA Corp., 5-8-1 Yotsuya, Fuchu-shi, Tokyo 183-8508, Japan

Electron Device Division, ANELVA Corp., 5-8-1 Yotsuya, Fuchu-shi, Tokyo 183-8508, Japan

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

NanoElectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan

Electron Device Division, ANELVA Corp., 5-8-1 Yotsuya, Fuchu-shi, Tokyo 183-8508, Japan

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 05, Aramaki, Aoba-ku, Sendai 980-8579, Japan

Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan