High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling
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概要
- 論文の詳細を見る
We fabricated fully epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) and observed a magneto-resistance (MR) ratio of 88% at $T = 293$ K (146% at $T = 20$ K), the highest value yet reported. The origin of the high MR ratio is not the diffusive tunneling of Julliere's model but the coherent spin-polarized tunneling in epitaxial MTJs, in which only the electrons with totally symmetric wave functions with respect to the barrier-normal axis can tunnel. The bias-voltage dependence of the MR was very small, resulting in a high output voltage of 380 mV. This high voltage will help overcome problems in the development of high-density magnetoresistive random-access-memory (MRAM).
- Japan Society of Applied Physicsの論文
- 2004-04-15
著者
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Yuasa Shinji
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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FUKUSHIMA Akio
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Ando Koji
Nanoelectronics Research Institute Aist
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Suzuki Yoshishige
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nagahama Taro
NanoElectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Yuasa Shinji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Yuasa Shinji
NanoElectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Fukushima Akio
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Fukushima Akio
NanoElectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Ando Koji
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ando Koji
NanoElectronics Research Institute, AIST, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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