Effective Creation of Spin Polarization in p-Type Ge from a Fe/GeO
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概要
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We examined electrical creation of spin-polarized carriers in heavily doped p-type Ge from a Fe/GeO<inf>2</inf>tunnel contact where GeO<inf>2</inf>is an amorphous insulator. Clear spin accumulation signals were successfully observed up to 300 K down to a very low voltage of 1 mV. In contrast to epitaxial Fe/MgO tunnel contact, the magnitude of spin accumulation signal exhibits a nearly symmetric behavior with respect to the bias voltage polarity. These results establish that GeO<inf>2</inf>is an effective tunnel barrier for spin injection and detection in germanium.
- 2013-04-25
著者
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YUASA Shinji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Ando Koji
Spintronics Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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SAITO Hidekazu
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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SPIESSER Aurelie
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Ando Koji
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Watanabe Suguru
Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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