High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-01-10
著者
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Maehara Hiroki
Process Development Center Canon Anelva Corporation
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Maehara Hiroki
Process Development Center, Canon ANELVA Corporation, Kawasaki 215-8550, Japan.National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.Institute of Applied Physics, University
関連論文
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions