Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
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概要
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We investigated the Gilbert damping of thin films with a MgO-barrier/Fe<inf>80</inf>B<inf>20</inf>/MgO-cap/Ta structure, in which the Fe<inf>80</inf>B<inf>20</inf>layer corresponds to a free layer of a perpendicularly magnetized magnetic tunnel junction, by using ferromagnetic resonance (FMR). We systematically varied the thickness of the MgO cap layer and estimated the damping constant (\alpha) by measuring the dependence of the FMR spectrum on the magnetic field angle. The MgO cap layer was found to reduce \alpha to about 0.005, which is less than half the value without the cap. The significant reduction can be explained by the suppression of spin pumping by the dielectric MgO cap layer.
- 2013-07-25
著者
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Ando Koji
National Institute Of Advanced Industrial Science And Technology (aist) Spintronics Research Center
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Imamura Hiroshi
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Taniguchi Tomohiro
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Ando Koji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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