Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 2013-07-25
著者
-
Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
-
Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
-
YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
-
Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
-
Konoto Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
-
Sekine Masaki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
-
Matsumoto Rie
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
-
Tamaru Shingo
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
-
NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center
-
NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology,Spintronics Research Center
関連論文
- Large Diode Sensitivity of CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Single-Shot Measurements of Spin-Transfer Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Giant Tunneling Magnetoresistance in MgO-Based Magnetic Tunnel Junctions(Advances in Spintronics)
- Giant Peltier Effect in a Submicron-Sized Cu-Ni/Au Junction with Nanometer-Scale Phase Separation
- Current-Field Driven "Spin Transistor"
- Frequency Converter Based on Nanoscale MgO Magnetic Tunnel Junctions
- Quantitative analysis of coherent and incoherent tunneling currents in MgO-based epitaxial magnetic tunnel junctions
- Accuracy of a Harmonically Operated Single Electron Pump : Instrumentation, Measurement, and Fabrication Technology
- Preparation of Highly-Oriented Co2MnSi Films on a Non-Single-Crystalline Substrate Using a Titanium--Nitride Buffer Layer
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
- Ultrahigh Speed Spin-Transfer Magnetization Switching in Magnetic Multilayers
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Critical Field of Spin Torque Oscillator with Perpendicularly Magnetized Free Layer
- Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin \gamma-Fe
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Growth of a High-Quality Ultrathin Fe(001) Layer on MgO(001) by Insertion of an Ultrathin γ-Fe₂O₃ Layer
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe₂O₃/MgO Barrier
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe_2O_3/MgO Barrier
- Effect of MgO Cap Layer on Gilbert Damping of FeB Electrode Layer in MgO-Based Magnetic Tunnel Junctions
- Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
- Spin dice: A scalable truly random number generator based on spintronics
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Bias field angle dependence of the self-oscillation of spin torque oscillators having a perpendicularly magnetized free layer and in-plane magnetized reference layer