Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-06-30
著者
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NOZAKI Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center
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Nozaki Takayuki
National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan.CREST, JST, Kawaguchi, Saitama 332-0012, Japan.
関連論文
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe_2O_3/MgO Barrier
- Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers