Ultralow-Voltage Spin-Transfer Switching in Perpendicularly Magnetized Magnetic Tunnel Junctions with Synthetic Antiferromagnetic Reference Layer
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概要
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We developed top-free-type perpendicularly magnetized magnetic tunnel junctions (p-MTJs) with a synthetic antiferromagnetic (SAF) bottom reference layer consisting of [Co/Pt] superlattice and Ru spacer layers. We successfully demonstrated practical properties such as a low resistance--area (\mathit{RA}) product ({<}3 \Omega μm<sup>2</sup>), ultralow writing voltage ({<}200 mV) for spin-transfer-torque (STT) switching, and high annealing stability (up to 350 °C) in the same p-MTJ cells. Moreover, the p-MTJs showed clear bi-stable states even at zero external magnetic fields, thanks to the low stray field from the SAF structure. The results are promising for both high integration and ultralow-voltage operation of STT magnetoresistive random access memory (MRAM).
- 2013-11-25
著者
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Yuasa Shinji
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Fukushima Akio
National Institute Of Advanced Industrial Science And Technology
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YAKUSHIJI Kay
National Institute of Advanced Industrial Science and Technology (AIST)
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Kubota Hitoshi
National Inst. Advanced Industrial Sci. And Technol. (aist) Tsukuba Jpn
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Yuasa Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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Konoto Makoto
National Institute of Advanced Industrial Science and Technology (AIST), Spintronics Research Center, Tsukuba, Ibaraki 305-8568, Japan
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