Enhancement of Radiative Recombination Rate of Excitons in Si Nanocrystals on Au Film
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概要
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We investigate the time-resolved photoluminescence (PL) spectra of Si-nanocrystal (Si-nc)-doped SiO2 on Au thin films. It is shown that PL intensity within several tenth of μs after excitation is increased in the presence of Au films. The data suggest that the radiative recombination rate of excitons in Si-nc's is increased, and the degree of increase depends strongly on the emission photon energy. We show that the enhancement is caused by the modification of the local photonic mode density in the presence of Au thin films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-08-15
著者
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Nakamura Toshihiro
Department Of Anesthesiology Yamanashi Medical University
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Takeda Eiji
Department Of Applied Physics Faculty Of Engineering Osaka University
-
Hayashi Shinji
Department Of Anatomy And Embryology Tokyo Metropolitan Institute For Neuroscience
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Imakita Kenji
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
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Fujii Minoru
Department of Chemical Engineering System, School of Engineering, The University of Tokyo
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Miura Satoru
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
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