Photoluminescence from Si Nanocrystals Embedded in In2O3/SiO2 Glass Thin Films
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概要
- 論文の詳細を見る
The photoluminescence (PL) properties of Si nanocrystals embedded in In2O3/SiO2 thin films are studied. The PL properties strongly depend on In and excess Si concentrations. For the samples with an excess Si concentration larger than 3.4 at. %, the PL intensity increases as In concentration increases up to 0.46 at. %, while the PL decay rate is nearly constant. This suggests that the number of Si nanocrystals contributing to the PL increases. On the other hand, when the excess Si concentration is low (1.4 at. %), the PL intensity monotonically decreases with increasing In concentration. The decrease in the PL intensity is accompanied by the increase in a decay rate, indicating that the nonradiative recombination process is introduced by In doping.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-15
著者
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FUJII Minoru
Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University
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Hayashi Shinji
Graduate School Of Environment And Information Sciences Yokohama National University
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Matsumoto Kimihisa
Graduate School Of Science And Technology Kobe University
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Matsumoto Kimihisa
Graduate School of Science and Technology, Kobe University, Kobe 657-8501, Japan
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Fujii Minoru
Department of Chemical Engineering System, School of Engineering, The University of Tokyo
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