Radial Distribution of Active Impurities in Individual In situ Boron-Doped Silicon Nanowires: A Raman Scattering Study
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概要
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The radial distribution of electrically active B in individual in situ B-doped Si nanowires (SiNWs) grown by the vapor liquid solid (VLS) process is studied by combining micro-Raman spectroscopy and wet chemical etching. The etching of the surface layer results in significant changes in the Raman spectra; Fano-type asymmetry, which is a characteristic of heavily doped p-type Si, disappears and the spectra become almost symmetric. The Raman data reveal that the as-grown B-doped SiNWs consist of a heavily B-doped shell and an almost intrinsic core.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-08-25
著者
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Hayashi Shinji
Department Of Anatomy And Embryology Tokyo Metropolitan Institute For Neuroscience
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Fujii Minoru
Department of Chemical Engineering System, School of Engineering, The University of Tokyo
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Fujii Minoru
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Saitoh Tohru
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Kawashima Takahiro
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Nishimura Chiharu
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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