Computer-Aided Chemistry Estimation Method of Electronic-Polarization Dielectric Constants for the Molecular Design of Low-$k$ Materials
スポンサーリンク
概要
- 論文の詳細を見る
Using computer-aided chemistry, we attempted to develop an estimation method for screening potential low-$k$ materials in ultra-large semiconductor integration (ULSI) device production research. Related to electronic polarizability of organic compounds and also polymers, dielectric constants were estimated without experimental data using the chemical structure of the material and computational chemistry programs such as Molecular Orbital Package (MOPAC) and Chem Draw. Initially, a method for calculating the density of low molecular weight organic materials was developed. Then, related to their electronic polarizability for these organic compounds, dielectric constants were calculated with good accuracy. This method was also expanded to one-dimensional polymeric materials and found to be a useful tool for the molecular design of new low-$k$ materials in ULSI device production research.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-01-15
著者
-
Saiki Atsushi
Graduate School Of Advanced Science Of Matter Hiroshima University
-
Sakaue Hiroyuki
Graduate School Of Advanced Science Of Matter Hiroshima University
-
Takahagi Takayuki
Graduate School of Advanced Science of Matter, Hiroshima University, Kagamiyama 1-3, Higashi-Hiroshima 739-8526, Japan
-
Takahagi Takayuki
Graduate School of Advance Science of Matter, Hiroshima University, 1-3 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526, Japan
-
Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, Kagamiyama 1-3, Higashi-Hiroshima 739-8526, Japan
-
Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
-
Saiki Atsushi
Graduate School of Advanced Science of Matter, Hiroshima University, Kagamiyama 1-3, Higashi-Hiroshima 739-8526, Japan
-
Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
関連論文
- Effect of Deposition Conditions on the Structure and Properties of CrAlN Films Prepared by Pulsed DC Reactive Sputtering in FTS Mode at High Al Content
- 1P169 タンパク質標識に用いる金ナノ粒子の作製法の開発(分子モーター,第48回日本生物物理学会年会)
- 1P170 金ナノ粒子を用いた細胞質ダイニン複合体の電子顕微鏡観察(分子モーター,第48回日本生物物理学会年会)
- 1P171 多機能GFPタグで見えてきた哺乳類細胞におけるダイニン-ダイナクチンのダイナミックな動態(分子モーター,第48回日本生物物理学会年会)
- Fabrication of Carbon Nanotube and Nanorod Arrays Using Nanoporous Templates
- Formation of Al Dot Hexagonal Array on Si Using Anodic Oxidation and Selective Etching : Surfaces, Interfaoes, and Films
- Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere : Semiconductors
- Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I : Semiconductors
- Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Arrays Using DNA : Surfaces, Interfaces, and Films
- Experimental Study of Temperatures of Atmospheric-Pressure Nonequilibrium Ar/N_2 Plasma Jets and Poly(ethylene terephtalate)-Surface Processing
- Adsorption of Dibutyl Phthalate and Dioctyl Phthalate on Si Substrate
- Analysis of Chemical Structures of Ulthathin Oxynitride Films by X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectrometry
- Corrosion Prevention of Pure Iron Using Self-Assembled Monolayer Coating
- Simple Method of Synthesizing Nickel--Nitrilotriacetic Acid Gold Nanoparticles with a Narrow Size Distribution for Protein Labeling
- Analysis of Chemical Structures of Ultrathin Oxynitride Films by X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectrometry
- AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method
- Thickness Dependences of Nucleation and Annihilation Fields of Magnetic Vortices in Submicron Supermalloy Dots
- Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100 nm Cu Interconnections
- Climbing Rates of Microtubules Propelled by Dynein after Collision with Microfabricated Walls
- Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu
- Adsorption of Dibutyl Phthalate and Dioctyl Phthalate on Si Substrate
- Computer-Aided Chemistry Estimation Method of Electronic-Polarization Dielectric Constants for the Molecular Design of Low-$k$ Materials
- Contact Resistance Reduction Using Vacuum Loadlock System and Plasma Dry Cleaning
- Epitaxial Silicon Growth by Load-Lock Low Pressure Chemical Vapor Deposition System for Elevated Source/Drain Formation
- Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
- Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template
- Formation and Evaluation of Electroless-Plated Barrier Films for High-Aspect-Ratio Through-Si Vias
- Adsorbed Water on a Silicon Wafer Surface Exposed to Atmosphere
- Preparation of Ultrahigh-Density Magnetic Nanowire Arrays beyond 1 Terabit/Inch2 on Si Substrate Using Anodic Aluminum Oxide Template
- Effect of Additives on Hole Filling Characteristics of Electroless Copper Plating