Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template
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概要
- 論文の詳細を見る
The control of the crystal orientation and diameter of vertically grown epitaxial Si nanowires was demonstrated using a combination of a vapor--liquid--solid (VLS) growth technique and the use of an anodic aluminum oxide (AAO) template on a single-crystal Si substrate. The [100], [110], and [111] nanowires were selectively obtained by choosing the Si substrate with appropriate crystal orientation. The diameter of a Si nanowire in the AAO template could be controlled by the modification of the pore size of the AAO template with anodic voltage during anodization.
- 2013-06-25
著者
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SHIMIZU Tomohiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Inoue Fumihiro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
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Otsuka Shintaro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Tada Yoshihiro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Wang Chonge
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Koto Makoto
Canon Inc., Corporate R&D Headquarters, Ota, Tokyo 146-8501, Japan
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