Formation and Evaluation of Electroless-Plated Barrier Films for High-Aspect-Ratio Through-Si Vias
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概要
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The formation of a diffusion barrier layer in a through-Si via (TSV) has been studied with a combination of nanoparticle catalyst and electroless plating (ELP). We used Au-nanoparticles (Au-NPs) or Pd-nanoparticles (Pd-NPs) as catalysts for ELP of Ni- and Co-alloy barrier layers. We studied deposition of Ni--B and Co--B films in high-aspect-ratio (AR) TSV. Then, we succeeded in controlling the deposition profile of Ni--B in a high-AR TSV by the addition of bis(3-sulfopropyl)-disulfide (SPS). SPS turned out to be an inhibitor of electroless plating of Ni--B. On the other hand, the Co--B film was deposited conformally without additive. The electrical resistivity of Cu after annealing Cu/barrier stacked structure suggests that Co--B has better thermal stability than Ni--B.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-05-25
著者
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SHIMIZU Tomohiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyake Hiroshi
Graduate School Of Bioagricultural Sciences Nagoya University
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Inoue Fumihiro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Inoue Fumihiro
Graduate School of Science and Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Tanaka Shukichi
National Institute of Information and Communication Technology, Kobe Advanced Research Center, Kobe 651-2492, Japan
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Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8530, Japan
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Yokoyama Takumi
Graduate School of Science and Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Terui Toshifumi
National Institute of Information and Communication Technology, Kobe Advanced Research Center, Kobe 651-2492, Japan
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Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
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