Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments

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概要

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• Resistance change random access memory (ReRAM) has been expected to be a next generation non-volatile memory. However, poor reproducibility of threshold voltage at which the dramatic change of the resistivity occurs hinders the practical application. We have attempted to improve the reproducibility of switching voltages using anodic porous alumina whose nanoholes are quite useful to restrict the filament forming area on the basis of the filament model. In this study, we have reported the pore size and film properties dependences of the variation width of the switching voltages. Two kinds of oxide films prepared by oxalic and sulfuric acids with two different anodic times were used as the insulating layer. Contrary to our expectation, just the sulfuric samples indicate good improvement about the switching voltages. Considering that the size of the effective contact area is not enough small against the filament size, the changing the film properties seems to be important for the suppressing the variation of switching voltages.

• 2013-06-25

著者

• SHIMIZU Tomohiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Takano Yoshiki

  College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• Furuya Saeko

  College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• Shingubara Shouso

  Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan

• Watanabe Tadataka

  College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• Takase Kouichi

  College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• Otsuka Shintaro

  Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan

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• Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments
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