Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
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概要
- 論文の詳細を見る
An investigation of current--voltage (I--V) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO<inf>2</inf>/Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO<inf>2</inf>/Au device from these results.
- 2013-06-25
著者
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SHIMIZU Tomohiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kato Takashi
Graduate School For International Development And Cooperation Hiroshima University
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Shingubara Shoso
Graduate School of Advanced Science of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
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Otsuka Shintaro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Kyomi Takuya
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Hamada Yoshifumi
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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Tada Yoshihiro
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan
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