Epitaxial Silicon Growth by Load-Lock Low Pressure Chemical Vapor Deposition System for Elevated Source/Drain Formation

概要

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A silicon epitaxial layer on the active region of a Si substrate was selectively grown under a low temperature condition of 620°C with a low pressure chemical vapor deposition (LPCVD) employing SiH4 as a precursor, without high-temperature H2 annealing and ultra high vacuum chemical vapor deposition (UHV-CVD). This method was achieved by the use of a N2-purged wafer cassette and a load-lock chamber that was directly connected to the CVD chamber. A cross-sectional transmission electron microscopy (TEM) micrograph of the interface between the CVD-deposited film and the Si substrate revealed that the Si film was grown homoepitaxially, however nanometer-scaled silicon oxide islands were sparsely formed at the interface. Epitaxial film growth seemed to be achieved by lateral grain growth over oxide islands during film deposition. Polycrystalline Si was grown on the silicon oxide under the same deposition condition, and a Si epitaxial growth layer was formed on the active region selectively by wet chemical etching using HNO3, CH3COOH and HF-based solution. Since this system has higher throughput than conventional UHV-CVD or MBE systems, it is expected to become important for the development of future ULSI devices with a sub-50 nm-scale metal–oxide–semiconductor field effect transistor (MOSFET).
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-01-15