Analysis of Chemical Structures of Ultrathin Oxynitride Films by X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectrometry
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概要
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Oxynitride films were formed on a hydrogen-terminated Si wafer and on a 2 nm Si oxide film wafer using nitrous oxide, nitric monoxide, and ammonia as nitrogen sources in a vertical furnace with a vacuum load-lock function. Thickness of the oxynitride films and their chemical depth profiles were studied by ellipsometry, angle-resolved X-ray photoelectron spectroscopy (AR-XPS), and secondary ion mass spectrometry (SIMS). Results revealed that the majority of nitrogen in oxynitride films is unevenly distributed at the interface between the Si wafer and the oxide film. The dissociation energies of the nitrogen sources were evaluated using the density functional theory. Nitrogen concentration was found to be related to the nitrogen sources in the following order, ammonia $>$ nitric monoxide $>$ nitrous oxide, which is the order of the dissociation energies of the nitrogen sources where ammonia exhibited the smallest dissociation energy and nitrous oxide the largest.
- 2003-03-15
著者
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Miya Hironobu
Hitachi Kokusai Electric Inc. Semiconductor Equipment System Laboratory
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IZUMI Manabu
Hitachi Kokusai Electric Inc., Semiconductor Equipment System Laboratory
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Konagata Shinobu
Hitachi Kokusai Electric Inc. Semiconductor Equipment System Laboratory
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Takahagi Takayuki
Graduate School of Advance Science of Matter, Hiroshima University, 1-3 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526, Japan
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Konagata Shinobu
Hitachi Kokusai Electric Inc., Semiconductor Equipment System Laboratory, 2-1 Yasuuchi, Yatsuo-machi, Nei-gun, Toyama, Japan
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