Low-Temperature and High-Rate Deposition of SrTiO3 Thin Films by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
SrTiO3 thin films have been prepared by RF magnetron sputtering at the a substrate temperature of 200°C and a high deposition rate of 35 nm/min on Al/glass substrates. The deposition rate of the SrTiO3 thin film was controlled by RF power during the deposition. The orientation of the films changed and the grain boundaries became sparse with increasing RF power. Furthermore, the leakage current of the capacitors also increased with increasing RF power. As the RF power increased, the signal intensity ratios of O$_{2}^{+}$/O and Ti/Sr in the optical emission spectroscopy decreased. The application of optimum working pressure resulted in recovery of the signal intensity ratios of O$_{2}^{+}$/O in the optical emission spectroscopy and improvement in the properties of the SrTiO3 film deposited at a high RF power. The SrTiO3 film of 300 nm thickness exhibited a relative dielectric constant of 64 and a leakage current of $4\times 10^{-10}$ A/cm2 at the voltage of ${+}3$ V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-01-15
著者
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Kohara Naoki
Central Research Laboratories Matsushita Electric Ind.co. Ltd.
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Kitagawa Masatoshi
Corporate Production Engineering Laboratories Matsushita Electric Ind.co. Ltd.
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SAWADA Taisuke
Electronic Circuit Capacitor Division, Matsushita Electric Ind. Co. , Ltd.
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Yoshida Akihisa
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Kohara Naoki
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
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Kitagawa Masatoshi
Corporate Production Engineering Laboratories, Matsushita Electric Ind. Co., Ltd., 2-7 Matsuba-cho, Kadoma, Osaka 571-8502, Japan
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Sawada Taisuke
Electronic Circuit Capacitor Division, Matsushita Electric Ind. Co., Ltd., 3-10-31 Hanatenhigashi, Tsurumi-ku, Osaka 538-0044, Japan
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Yoshida Akihisa
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan
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