Yoshida Akihisa | Central Research Laboratories Matsushita Electric Ind. Co. Ltd.

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著作論文

Formation of n^+ a-Si:H Thin Layer by Ion-Doping Technique
β-SiC Formation by Low-Energy Ion-Doping Technique
Plasma Ion-Doping Technique with 20 kHz Biased Electron Cyclotron Resonance Discharge : Techniques, Instrumentations and Measurement
Large Area Doping Technique Using an Ion Source of rf Discharge with Magnetic Field : Techniques, Instrumentations and Measurement
Low-Temperature and High-Rate Deposition of SrTiO_3 Thin Films by RF Magnetron Sputtering
Fabrication of a-Si:H Thin Film Transistors on 4-inch Glass Substrates by a Large Area Ion Doping Technique
Low-Temperature and High-Rate Deposition of SrTiO3 Thin Films by RF Magnetron Sputtering

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