CVD法によるSi基板上へのY-Ba-Cu-O超伝導膜の作製 (酸化物超伝導体の材料プロセス化と特性評価<特集>)

概要

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Y-Ba-Cu-O films were prepared at 700°C on Si(100) substrates and on (Y2O3)/(Y2O3 stabilized ZrO2) buffer layers by chemical vapor deposition using p-diketone metal chelates as sources. The films were mainly composed of c-axis oriented YBa2Cu3Ox. Auger electron spectroscopy revealed interdiffusion of elements between the substrates and the films deposited directly on the Si substrates. The interdiffusion was prevented using the buffer layers. Epitaxial growth of YBa2Cu3Ox was confiremed by X-ray pole figure analysis for the films deposited on the Si substrates with the buffer layers. The films on the buffer layers showed zero resistivity at 87 K. Its critical current density was 103A/cm2 at 77 K and 0 T.
社団法人粉体粉末冶金協会の論文