CVD法により合成したSiC-TiC in-situ複合セラミックスの微細組織 (射出成形・ダイヤモンドおよびcBN薄膜・希土類・セラミックス複合材料<特集>) -- (セラミックス複合材料)

概要

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The SiC-TiC in-situ composites were prepared by chemical vapor deposition using SiCl4, TiCl4, CCl4 and H2 as source gases. The deposits containing free C, TiSi2 or Ti3SiC2 were porous or granular, while the SiC-TiC in-situ composites were dense platelike. The microstructures of the SiC-TiC in-situ composites varied depending on the deposition conditions. The SiC-TiC in-situ composite prepared at Tdep=1673K, CCl4/H2=1.7x 10-2 and SiCl4/(SiCl4+TiCl4)=0.42, in which fine SiC particles were uniformly dispersed in the TiC matrix, had a high fracture toughness value (KIC) more than 10 MPam1/2.