酸化鉛とチタニウムテトライソプロポキシドを原料としたCVD法によるPbTiO_3の合成

概要

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PbTiO_3 was deposited on a (110) sapphire substrate by chemical vapor deposition using PbO and titanium tetra-i-propoxide (Ti[OCH(CH_3)_2]_4 : TTIP]. PbO and TTIP vapors generated at 1100°-1270℃ and 64°-174℃ respectively were trans ported to a substrate with carrier gases of Ar (350 ml/min) and O_2(350 ml/min). One-phase PbTiO_2 was obtained at substrate temperatures (T_s) from 600°to 1150℃. Morphology of PbTiO_3 formed on the substrate was fine particle (T_s= 600°-800℃), Large particle (800°-1100℃) and platelet (1100°-1150℃). Good adhesion was observed between the deposit and the substrate above T_s= 800℃. The platelets had crystalline preferred orientation. The crystallographic plane parallel to substrate changed from (111) to (100) and (001) with increasing TTIP evaporation temperature.
社団法人日本セラミックス協会の論文
1988-08-01