有機液体原料を用いたラジカルビーム堆積法による低炭素濃度シリコン窒化膜の堆積(<特集>半導体エレクトロニクス)

概要

論文の詳細を見る
Silicon nitride (SiN_X) films have been deposited at a substrate temperature ranged from R.T. to 800℃ by a new radical-beam deposition technique. In order to reduce carbon incorporation into the film, hexamethyldisilazane was decomposed in a reaction with atomic nitrogen rather than in plasma directly in this technique. The carbon concentration of the film was estimated to be less than the order of 10^<19>cm^<-3> based on secondary ion mass spectroscopy. The density of the film estimated from Rutherford backscattering spectroscopy (RBS) increased from 2.6 to 3.2g/cm^3 with increasing substrate temperature. The resistivity and the dielectric constant of the film were evaluated to be 10^<13>Ω ・ cm at 3MV/cm and 5.7 at 300kHz, respectively. This new technique is promising to obtain high-quality SiN_X film by deposition without using SiH_4.
社団法人日本材料学会の論文
2004-12-15