ナノスケール機械加工と化学エッチングを併用した3次元極微細構造形成 : 第4報,マスキング作用のメカニズム(機械要素,潤滑,工作,生産管理など)

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rights: 本文データは社団法人日本機械学会の許諾に基づきCiNiiから複製したものであるThis study is intended to fabricate 3D microstructures on single crystal silicon by tribo-nano-lithography(TNL) and wet chemical etching. The processed area of single crystal silicon by diamond tip withstands etching in KOH solution, and consequently protruding microstructure can be fabricated. Transmission electron microscope(TEM), Auger electron spectroscopy(AES) and secondary ion mass spectrometry(SIMS) analyses are utilized to study the mechanism of masking effect. As a result, it can be known that crystal silicon structures are converted to amorphous silicon by TNL process, resulting in acting to the etch mask against KOH solution. Comparison of etch rate between amorphous and single crystal silicon is conducted. In addition, mechanism of protuberance, which is generated in processing under lower normal load, is studied with minute observation of processed area.
社団法人日本機械学会の論文
2005-06-25